![]() ![]() In contrast, those with single- and double-layer MoS2 exhibited such good nanodevice To satisfy those properties in MoS2-based phototransistors, the transparent and patterned top-gate approaches are mostly required, including high-k dielectric deposition on the MoS2 channel.11 In this Letter, we demonstrate for the first time a transparent top-gate phototransistor with single-, double-, and triple-layer MoS2 nanosheets, which was respectively analyzed by photoelectric probing as equipped with a patterned transparent gate electrode on a top of 50 nm-thin oxide dielectric.21 Our device with triple-layer MoS2 showed some loss of low-dimensional electric properties but instead exhibited good photodetection capabilities for red and green lights. ![]() ![]() s, basically using thick thermally oxidized SiO2 layers (on p+2-Si wafer) as the back gate dielectric, in which way any practical applications are hardly probable.20 For practical phototransistors, superior mobility and subthreshold swing are mandatory along with compatibility to circuit integration.KEYWORDS: MoS2, phototransistor, photoresponse, energy gap ∼0.3 cm2/V ![]() The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS2 has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS2 reduce to 1.65 and 1.35 eV, respectively. The varied functionalities are attributed to energy gap modulation by the number of MoS2 layers. Our devices with triple MoS2 layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. Institute of Physics and Applied Physics and §School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea ‡ Department of Applied Chemistry, Kyung Hee University, Yongin, Gyeonggi 446-701, Korea S Supporting Information *ĪBSTRACT: We report on the fabrication of top-gate phototransistors based on a few-layered MoS2 nanosheet with a transparent gate electrode. MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap Hee Sung Lee,† Sung-Wook Min,† Youn-Gyung Chang,† Min Kyu Park,‡ Taewook Nam,§ Hyungjun Kim,§ Jae Hoon Kim,† Sunmin Ryu,‡ and Seongil Im*,† † ![]()
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